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G28F320J5-120 PDF预览

G28F320J5-120

更新时间： 2024-09-24 22:07:39
品牌 Logo 应用领域
英特尔 - INTEL 存储
页数 文件大小 规格书
53页 638K
描述
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT

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中文翻译

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G28F320J5-120 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：7.67 X 9.79 MM, CSP, MICRO, BGA-56
针数：56Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.92最长访问时间：120 ns
其他特性：BLOCK ERASE; 100000 ERASE CYCLES PER BLOCK ; CONFIGURABLE AS 2M X 16备用内存宽度：8
命令用户界面：YES通用闪存接口：YES
数据轮询：NOJESD-30 代码：R-PBGA-B56
JESD-609代码：e0长度：9.79 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：32端子数量：56
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：-20 °C组织：4MX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA53(UNSPEC)
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小：16/32 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1 mm
部门规模：128K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.1 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：MOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPE宽度：7.67 mm
Base Number Matches：1

G28F320J5-120 数据手册

 浏览型号G28F320J5-120的Datasheet PDF文件第2页浏览型号G28F320J5-120的Datasheet PDF文件第3页浏览型号G28F320J5-120的Datasheet PDF文件第4页浏览型号G28F320J5-120的Datasheet PDF文件第5页浏览型号G28F320J5-120的Datasheet PDF文件第6页浏览型号G28F320J5-120的Datasheet PDF文件第7页 
ADVANCE INFORMATION  
E
INTEL StrataFlash™ MEMORY TECHNOLOGY  
32 AND 64 MBIT  
28F320J5 and 28F640J5  
High-Density Symmetrically-Blocked  
Architecture  
64 128-Kbyte Erase Blocks (64 M)  
Cross-Compatible Command Support  
Intel Basic Command Set  
Common Flash Interface  
32 128-Kbyte Erase Blocks (32 M)  
Scaleable Command Set  
5 V VCC Operation  
2.7 V I/O Capable  
32-Byte Write Buffer  
6 µs per Byte Effective  
Programming Time  
Configurable x8 or x16 I/O  
640,000 Total Erase Cycles (64 M)  
320,000 Total Erase Cycles (32 M)  
10,000 Erase Cycles per Block  
120 ns Read Access Time (32 M)  
150 ns Read Access Time (64 M)  
Enhanced Data Protection Features  
Absolute Protection with  
VPEN = GND  
Automation Suspend Options  
Block Erase Suspend to Read  
Block Erase Suspend to Program  
Flexible Block Locking  
Block Erase/Program Lockout  
during Power Transitions  
System Performance Enhancements  
STS Status Output  
Industry-Standard Packaging  
µBGA* Package, SSOP and TSOP  
Packages (32 M)  
Intel StrataFlash™ Memory Flash  
Technology  
Capitalizing on two-bit-per-cell technology, Intel StrataFlash™ memory products provide 2X the bits in 1X the  
space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are  
the first to bring reliable, two-bit-per-cell storage technology to the flash market.  
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,  
support for code and data storage, and easy migration to future devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash  
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,  
Intel StrataFlash components are ideal for code or data applications where high density and low cost are  
required. Examples include networking, telecommunications, audio recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design  
migrations from existing 28F016SA/SV, 28F032SA, and Word-Wide FlashFile memory devices (28F160S5  
and 28F320S5).  
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By  
using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take  
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.  
Manufactured on Intel’s 0.4 micron ETOX™ V process technology, Intel StrataFlash memory provides the  
highest levels of quality and reliability.  
January 1998  
Order Number: 290606-004  
1234567...53

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 		RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.09 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-29.31OHM1% VISHAY

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 		RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.31 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-29.31OHM1.0% VISHAY

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 		RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.31 ohm, THROUGH HOLE MOUNT, AXIAL LEADED

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