Datasheet > G28F640J5-150

G28F640J5-150

更新时间： 2024-09-24 22:07:39

品牌	Logo	应用领域
英特尔 - INTEL		存储
页数	文件大小	规格书
53页	638K
描述
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

G28F640J5-150 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	VFBGA, BGA52,8X9,.30	针数：	56
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.78
最长访问时间：	150 ns	其他特性：	CONFIGURABLE AS 4M X 16; BLOCK ERASE
备用内存宽度：	8	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	NO
JESD-30 代码：	R-PBGA-B56	长度：	9 mm
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
部门数/规模：	64	端子数量：	56
字数：	4194304 words	字数代码：	4000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-20 °C	组织：	4MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA52,8X9,.30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	电源：	3/3.3,5 V
编程电压：	5 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1 mm
部门规模：	128K	最大待机电流：	0.000125 A
子类别：	Flash Memories	最大压摆率：	0.08 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	切换位：	NO
类型：	NOR TYPE	宽度：	7.7 mm
Base Number Matches：	1

G28F640J5-150 数据手册

ADVANCE INFORMATION

INTEL StrataFlash™ MEMORY TECHNOLOGY

32 AND 64 MBIT

28F320J5 and 28F640J5

High-Density Symmetrically-Blocked

Architecture

64 128-Kbyte Erase Blocks (64 M)

Cross-Compatible Command Support

Intel Basic Command Set

Common Flash Interface

32 128-Kbyte Erase Blocks (32 M)

Scaleable Command Set

5 V V_CCOperation

2.7 V I/O Capable

32-Byte Write Buffer

6 µs per Byte Effective

Programming Time

Configurable x8 or x16 I/O

640,000 Total Erase Cycles (64 M)

320,000 Total Erase Cycles (32 M)

10,000 Erase Cycles per Block

120 ns Read Access Time (32 M)

150 ns Read Access Time (64 M)

Enhanced Data Protection Features

Absolute Protection with

V_PEN= GND

Automation Suspend Options

Block Erase Suspend to Read

Block Erase Suspend to Program

Flexible Block Locking

Block Erase/Program Lockout

during Power Transitions

System Performance Enhancements

STS Status Output

Industry-Standard Packaging

µBGA* Package, SSOP and TSOP

Packages (32 M)

Intel StrataFlash™ Memory Flash

Technology

Capitalizing on two-bit-per-cell technology, Intel StrataFlash™ memory products provide 2X the bits in 1X the

space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are

the first to bring reliable, two-bit-per-cell storage technology to the flash market.

Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,

support for code and data storage, and easy migration to future devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash

memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,

Intel StrataFlash components are ideal for code or data applications where high density and low cost are

required. Examples include networking, telecommunications, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design

migrations from existing 28F016SA/SV, 28F032SA, and Word-Wide FlashFile memory devices (28F160S5

and 28F320S5).

Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By

using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take

advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.

Manufactured on Intel’s 0.4 micron ETOX™ V process technology, Intel StrataFlash memory provides the

highest levels of quality and reliability.

January 1998

Order Number: 290606-004

12 3 4 5 6 7...53

中文翻译

下载PDF

G28F640J5-150 替代型号

型号	品牌	替代类型	描述	数据表
M58WR064KB70ZB6E	MICRON	功能相似	M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8

与G28F640J5-150相关器件

型号	品牌	获取价格	描述	数据表
G28F640J5-L150	INTEL	获取价格	Flash, 8MX8, 150ns, PBGA56, 7.67 X 16.31 MM, CSP, MICRO, BGA-56
G28KP	NKK	获取价格	Process Sealed Ultra-Miniature Rockers
G28KP-YA	NKK	获取价格	Process Sealed Ultra-Miniature Rockers
G28KP-YB	NKK	获取价格	Process Sealed Ultra-Miniature Rockers
G28KP-YC	NKK	获取价格	Process Sealed Ultra-Miniature Rockers
G28XB	IDEA	获取价格	1.8 X 5.3 MM LED ARRAY
G-29.09OHM1.0%	VISHAY	获取价格	RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.09 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-29.31OHM1%	VISHAY	获取价格	RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.31 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-29.31OHM1.0%	VISHAY	获取价格	RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.31 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
G-29.531%	VISHAY	获取价格	RESISTOR, WIRE WOUND, 1.5 W, 1 %, 50 ppm, 9.53 ohm, THROUGH HOLE MOUNT, AXIAL LEADED

与G28F640J5-150相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

G28F640J5-150

G28F640J5-150 技术参数

G28F640J5-150 数据手册

G28F640J5-150 替代型号

与G28F640J5-150相关器件

与G28F640J5-150相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

G28F640J5-150

G28F640J5-150 技术参数

G28F640J5-150 数据手册

G28F640J5-150 替代型号

与G28F640J5-150相关器件

与G28F640J5-150相关文章

您还可以找

您在本页遇到什么问题？