5秒后页面跳转
G2020H1EN1SE3 PDF预览

G2020H1EN1SE3

更新时间: 2024-09-21 16:43:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
1页 21K
描述
Rectifier Diode, 1 Phase, Silicon,

G2020H1EN1SE3 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
应用:POWER配置:COMPLEX
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
相数:1Base Number Matches:1

G2020H1EN1SE3 数据手册

  

与G2020H1EN1SE3相关器件

型号 品牌 获取价格 描述 数据表
G2020H1FB1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1FB1SE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1FBC1SE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1FC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TB1SE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TBC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TC1SE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TN1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
G2020H1TN1SE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,