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G20160H1TB1SE3 PDF预览

G20160H1TB1SE3

更新时间: 2024-09-21 13:20:03
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 25K
描述
Rectifier Diode, 1 Phase, Silicon,

G20160H1TB1SE3 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

G20160H1TB1SE3 数据手册

  

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暂无描述
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