Datasheet > G1B-E3/54

G1B-E3/54

更新时间： 2024-01-04 04:27:39

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	343K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-1, 2 PIN

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G1B-E3/54 技术参数

生命周期：	Obsolete	零件包装代码：	DO-204
包装说明：	E-LALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.6
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-204AP
JESD-30 代码：	E-LALF-W2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最大输出电流：	1 A	封装主体材料：	GLASS
封装形状：	ELLIPTICAL	封装形式：	LONG FORM
认证状态：	Not Qualified	最大重复峰值反向电压：	100 V
最大反向恢复时间：	1.5 µs	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

G1B-E3/54 数据手册

G1A / B / D / G / J / K / M

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 86084

Rev. 1.3, 11-Aug-04

www.vishay.com

1 2 3 456

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与G1B-E3/54相关器件

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G1BF	YANGJIE	SMAF	获取价格
G1BF2	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格
G1BF3	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格
G1BF5	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格
G1BFQ	YANGJIE	SMAF	获取价格
G1BFS	YANGJIE	SMAF	获取价格

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