Datasheet > G1BQF1

G1BQF1

更新时间： 2024-01-27 07:17:20

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
4页	210K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,

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技术参数
数据手册

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G1BQF1 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	风险等级：	5.6
其他特性：	FREE WHEELING DIODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-F2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
参考标准：	AEC-Q101	最大重复峰值反向电压：	100 V
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

G1BQF1 数据手册

RoHS

G1AQ THRU G1MQ

COMPLIANT

Surface Mount General Purpose Rectifier

Features

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● High forward surge capability

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

● Part no. with suffix “Q” means AEC-Q101 qualified

Typical Applications

For use in general purpose rectification of power supplies,

inverters, converters, and freewheeling diodes for

consumer,automotive and telecommunication.

Mechanical Date

●

ackage: SOD-123FL

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Cathode line denotes the cathode end

Polarity:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

PARAMETER

SYMBOL UNIT

G1AQ

G1BQ

G1DQ

G1GQ

G1JQ

G1KQ

G1MQ

Device marking code

G1A

G1B

100

G1D

200

G1G

400

G1J

600

G1K

800

G1M

1000

Repetitive peak reverse voltage

V_RRM

I_O

Average rectified output current

@60Hz sine wave, Resistance load, T_L(FIG 1)

1.0

Surge(non-repetitive)forward current

I_FSM

T_STG

T_J

@ 60Hz half-sine wave,1 cycle, T_J=25℃

Storage temperature

Junction temperature

-55 ~+150

℃

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

TEST

PARAMETER

SYMBOL

G1AQ

G1BQ

G1DQ

G1GQ

1.1

G1JQ

G1KQ

G1MQ

UNIT

CONDITIONS

Maximum instantaneous

forward voltage drop per diode

V_F

I_FM=1.0A

Ta=25℃

Maximum DC reverse current at

rated DC blocking voltage per diode

I_RRM

μA

100

Ta=125℃

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S2217

Rev.1.0,09-May-19

www.21yangjie.com

12 3 4

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