Datasheet > G12072-54_15

G12072-54_15

更新时间： 2024-11-10 01:25:31

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HAMAMATSU		/
页数	文件大小	规格书
4页	1044K
描述
InGaAs PIN photodiode with preamp

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G12072-54_15 数据手册

InGaAs PIN photodiode with preamp

G12072-54

ROSA type, 1.3 μm, 10 Gbps

Features

Applications

φ1.25 mm sleeve type ROSA

8 gigabit ﬁber channel

(receiver optical sub-assembly)

10 gigabit ethernet (LR)

SFP + transceiver correspondence

High-speed response: 11.3 Gbps

Low power supply voltage: Vcc=3.3 V

Differential output

The device is susceptible to static electricity. To prevent the devices

from electrostatic damage, take measures against electrostatic charg-

es, such as grounding yourself, the workbench and tools.

Sensitivity: +5 to -19.5 dBm typ.

Flexible board interface

Absolute maximum ratings (Ta=25 °C)

Parameter

Supply voltage

Symbol

Vcc

Value

Unit

-0.3, +4.0

RSSI

Operating temperature*¹*²

Storage temperature*¹

Topr

Tstg

-20 to +90

-40 to +90

°C

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings

is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute

maximum ratings.

*1: No condensation

*2: Case temperature

Recommended operating conditions (Case temperature=-20 to +90 °C, no condensation)

Parameter

Supply voltage

Symbol

Vcc

Condition

Vcc-GND

-GND

Value

2.97 to 3.63

less than 2

1.26 to 1.37

Unit

μm

Gbps

RSSI

Spectral response range

Load resistance

Data rate

Capacitive coupling

NRZ, Mark ratio=1/2

8.5 to 11.3

www.hamamatsu.com

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