Datasheet > FX601

FX601

更新时间： 2024-11-19 22:32:15

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	130K
描述
Ultrahigh-Speed Switching Applications

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数据手册

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FX601 数据手册

Ordering number:EN4884

FX601

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Composite type composed of tow low ON-resistance

P-channel MOSFET chips for ultrahigh-speed

switching and low-voltage drive.

2120

[FX601]

· Facilitates high-density mounting.

· Tth FX601 is formed with two chips, each being

equivalent to the 2SJ316, placed in one package.

· Matched pair characteristics.

1:Gate1

2:Source1

3:Source2

4:Gate2

5:Drain2

6:Drain1

SANYO:XP6

(Bottom view)

Switching Time Test CIrcuit

Electrical Connection

1:Gate1

2:Source1

3:Source2

4:Gate2

5:Drain2

6:Drain1

(Top view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

–12

±12

–1

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

Allowable Power Dissipation

PW≤10µs, duty cycle≤1%

–4

Tch

˚C

Tc=25˚C, 1unit

Mounted on ceramic board (750mm²×0.8mm) 1unit

Mounted on ceramic board (750mm²×0.8mm)

1.5

Total Dissipation

Channel Temperature

Storage Temperature

150

Tstg

–55 to +150

· Marking:601

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/71095MO(KOTO) TA-0107 No.4884-1/4

12 3 4

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