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FX605 PDF预览

FX605

更新时间: 2024-11-19 22:32:15
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲光电二极管
页数 文件大小 规格书
4页 107K
描述
Ultrahigh-Speed Switching Applications

FX605 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:1.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.5 W最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX605 数据手册

 浏览型号FX605的Datasheet PDF文件第2页浏览型号FX605的Datasheet PDF文件第3页浏览型号FX605的Datasheet PDF文件第4页 
Ordering number:EN4888  
FX605  
P-Channel Silicon MOSFET  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Composite type composed of two low ON-resistance  
P-channel MOSFET chips for ultrahigh-speed  
switching and low-voltage drive.  
2120  
[FX605]  
· Facilitates high-density mounting.  
· The FX605 is formed with two chips, each being  
equivalent to the 2SJ190, placed in one package.  
· Matched pair characteristics.  
1:Gate1  
2:Source1  
3:Source2  
4:Gate2  
5:Drain2  
6:Drain1  
SANYO:XP6  
(Bottom view)  
Switching Time Test CIrcuit  
Electrical Connection  
1:Gate1  
2:Source1  
3:Source2  
4:Gate2  
5:Drain2  
6:Drain1  
(Top view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
–60  
±15  
–1  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW10µs, duty cycle1%  
–4  
A
DP  
P
D
P
D
P
T
Tch  
6
W
W
W
˚C  
˚C  
Tc=25˚C, 1unit  
Mounted on ceramic board (750mm2×0.8mm) 1unit  
Mounted on ceramic board (750mm2×0.8mm)  
1.5  
2
Total Dissipation  
Channel Temperature  
Storage Temperature  
150  
Tstg  
–55 to +150  
· Marking:605  
Continued on next page.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52098HA (KT)/71095MO(KOTO) TA-0111 No.4888-1/4  

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