生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 30 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.061 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX30VSJ06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB | |
FX30VSJ2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB | |
FX30VSJ-2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 100V, 0.176ohm, 1-Element, P-Channel, Silicon, Me | |
FX30VSJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-263AB | |
FX30VSJ-3 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 150V, 0.111ohm, 1-Element, P-Channel, Silicon, Me | |
FX30VSJ-3 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide | |
FX-312.000MHZBCD0001 | FOX |
获取价格 |
Series - Fundamental Quartz Crystal, 12MHz Nom, | |
FX-312.000MHZBCD1001 | FOX |
获取价格 |
Parallel - Fundamental Quartz Crystal, 12MHz Nom, | |
FX-312.000MHZBZE0001 | FOX |
获取价格 |
Series - Fundamental Quartz Crystal, 12MHz Nom | |
FX313/FX323 | ETC |
获取价格 |
QTC Data Store/Dispaly Driver |