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FX20ASJ-03F PDF预览

FX20ASJ-03F

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
瑞萨 - RENESAS 开关
页数 文件大小 规格书
4页 79K
描述
High-Speed Switching Use Pch Power MOS FET

FX20ASJ-03F 技术参数

生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX20ASJ-03F 数据手册

 浏览型号FX20ASJ-03F的Datasheet PDF文件第2页浏览型号FX20ASJ-03F的Datasheet PDF文件第3页浏览型号FX20ASJ-03F的Datasheet PDF文件第4页 
FX20ASJ-03F  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G0248-0100  
Rev.1.00  
Aug.20.2004  
Features  
Drive voltage : 4 V  
VDSS : – 30 V  
r
DS(ON) (max) : 0.12  
ID : – 20 A  
Outline  
MP-3A  
3
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
1
2
3
2, 4  
Applications  
Motor control, lamp control, solenoid control, DC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
–30  
Unit  
Conditions  
V
V
VGS = 0 V  
±20  
VDS = 0 V  
–20  
A
Drain current (Pulsed)  
Avalanche current (Pulsed)  
Source current  
IDM  
– 40  
A
IDA  
–5  
A
L = 10 µH  
IS  
–20  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
– 40  
A
PD  
25  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
0.32  
Typical value  
Rev.1.00, Aug.20.2004, page 1 of 3  

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