5秒后页面跳转
FX20ASJ-06-T23 PDF预览

FX20ASJ-06-T23

更新时间: 2024-11-19 14:50:23
品牌 Logo 应用领域
瑞萨 - RENESAS 开关脉冲晶体管
页数 文件大小 规格书
7页 79K
描述
20A, 60V, 0.166ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN

FX20ASJ-06-T23 技术参数

是否Rohs认证:不符合生命周期:Not Recommended
零件包装代码:SC-63包装说明:MP-3A, SC-63, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.166 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FX20ASJ-06-T23 数据手册

 浏览型号FX20ASJ-06-T23的Datasheet PDF文件第2页浏览型号FX20ASJ-06-T23的Datasheet PDF文件第3页浏览型号FX20ASJ-06-T23的Datasheet PDF文件第4页浏览型号FX20ASJ-06-T23的Datasheet PDF文件第5页浏览型号FX20ASJ-06-T23的Datasheet PDF文件第6页浏览型号FX20ASJ-06-T23的Datasheet PDF文件第7页 
FX20ASJ-06  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G1440-0200  
(Previous: MEJ02G0274-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
VDSS : – 60 V  
rDS(ON) (max) : 97 mΩ  
ID : – 20 A  
Integrated Fast Recovery Diode (TYP.) : 50 ns  
Outline  
RENESAS Package code: PRSS0004ZA-A  
(Package name: MP-3A)  
3
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
1
2
3
2, 4  
Applications  
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
–60  
Unit  
Conditions  
VGS = 0 V  
V
V
±20  
VDS = 0 V  
–20  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
–80  
A
IDA  
–20  
A
L = 100 µH  
IS  
–20  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
–80  
A
PD  
35  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
0.32  
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

与FX20ASJ-06-T23相关器件

型号 品牌 获取价格 描述 数据表
FX20ASJ2 ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA
FX20ASJ-2 MITSUBISHI

获取价格

HIGH-SPEED SWITCHING USE
FX20ASJ-2 POWEREX

获取价格

Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX20ASJ-2 RENESAS

获取价格

High-Speed Switching Use Pch Power MOS FET
FX20ASJ-2-T13 RENESAS

获取价格

High-Speed Switching Use Pch Power MOS FET
FX20K120 DIOTEC

获取价格

Protectifiers - LowVF-Rectifier with Overvoltage Protection
FX20K120_13 DIOTEC

获取价格

Protectifiers - LowVF-Rectifier with Overvoltage Protection
FX20K120_15 DIOTEC

获取价格

Rectifier with Overvoltage Protection
FX20K150 DIOTEC

获取价格

Rectifier with Overvoltage Protection
FX20KM-03 POWEREX

获取价格

Power Field-Effect Transistor, 20A I(D), 30V, 0.15ohm, 1-Element, P-Channel, Silicon, Meta