是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
零件包装代码: | SC-63 | 包装说明: | MP-3A, SC-63, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.166 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX20ASJ2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA | |
FX20ASJ-2 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FX20ASJ-2 | POWEREX |
获取价格 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FX20ASJ-2 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET | |
FX20ASJ-2-T13 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET | |
FX20K120 | DIOTEC |
获取价格 |
Protectifiers - LowVF-Rectifier with Overvoltage Protection | |
FX20K120_13 | DIOTEC |
获取价格 |
Protectifiers - LowVF-Rectifier with Overvoltage Protection | |
FX20K120_15 | DIOTEC |
获取价格 |
Rectifier with Overvoltage Protection | |
FX20K150 | DIOTEC |
获取价格 |
Rectifier with Overvoltage Protection | |
FX20KM-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.15ohm, 1-Element, P-Channel, Silicon, Meta |