Datasheet > FX20ASJ-03F-T13

FX20ASJ-03F-T13

更新时间： 2024-11-19 07:00:43

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
4页	79K
描述
High-Speed Switching Use Pch Power MOS FET

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FX20ASJ-03F-T13 数据手册

FX20ASJ-03F

High-Speed Switching Use

Pch Power MOS FET

REJ03G0248-0100

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 4 V

V_DSS: – 30 V

_{DS(ON) (max)}: 0.12 Ω

I_D: – 20 A

Outline

MP-3A

1. Gate

2. Drain

3. Source

4. Drain

2, 4

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

–30

Unit

Conditions

V_GS= 0 V

±20

V_DS= 0 V

–20

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

I_DM

– 40

I_DA

–5

L = 10 µH

I_S

–20

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_SM

– 40

P_D

°C

Tch

Tstg

—

– 55 to +150

0.32

Typical value

Rev.1.00, Aug.20.2004, page 1 of 3

12 3 4

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FX20ASJ-06-T23	RENESAS	获取价格	20A, 60V, 0.166ohm, P-CHANNEL, Si, POWER, MOSFET, MP-3A, SC-63, 3 PIN
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FX20ASJ-2	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
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FX20ASJ-2	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET