生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 1 A | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 2.88 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 4 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX1KM3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1A I(D) | SOT-186 | |
FX1KMH3 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1A I(D) | SOT-186 | |
FX1KMJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1A I(D) | SOT-186 | |
FX1KMJ-3 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide S | |
FX1KMJ-3 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 150V, 2.88ohm, 1-Element, P-Channel, Silicon, Meta | |
FX1N | MITSUBISHI |
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FX1S | |
FX1N6074 | SEMTECH |
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Rectifier Diode, 1 Element, 1.8A, 100V V(RRM), | |
FX1N6075 | SEMTECH |
获取价格 |
Rectifier Diode, 1 Element, 1.8A, 150V V(RRM), | |
FX1N6079 | SEMTECH |
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Rectifier Diode, 1 Element, 5A, 50V V(RRM), | |
FX1N6081 | SEMTECH |
获取价格 |
Rectifier Diode, 1 Element, 2.1A, 150V V(RRM), |