Datasheet > FTC2412K-S

FTC2412K-S

更新时间： 2024-11-08 01:06:51

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	318K
描述
General Purpose Transistors NPN Silicon

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中文翻译

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数据手册

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FTC2412K-S 数据手册

SEMICONDUCTOR

FTC2412K

TECHNICAL DATA

General Purpose Transistors

NPN Silicon

We declare that the material of product compliance with RoHS requirements.

•

ORDERING INFORMATION

Device

Marking

Shipping

FTC2412K-Q

3000 Tape & Reel

FTC2412K-R

FTC2412K-S

G1F

SOT– 23

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

COLLECTOR

V_CEO

V_CBO

V_EBO

I_C

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

BASE

7.0

EMITTER

Collector Current — Continuous

Collector power dissipation

Junction temperature

150

mAdc

P_C

0.2

T_j

150

T_stg

Storage temperature

-55 ~ +150

ELECTRICAL CHARACTERISTICS (T_A= 25 C unless otherwise noted.)

Characteristic

Symbol

V_(BR)CEO

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= 1 mA)

Emitter–Base Breakdown Voltage

(I_E= 50 µA)

V_(BR)EBO

V_(BR)CBO

I_CBO

Collector–Base Breakdown Voltage

(I_C= 50 µA)

Collector Cutoff Current

(V_CB= 60 V)

0.1

0.4

560

μA

Emitter cutoff current

(V_EB= 7 V)

I_EBO

Collector-emitter saturation voltage

(I_C/ I_B= 50 mA / 5m A)

DC current transfer ratio h FE

(V_CE= 6 V, I_C= 1mA)

V_CE(sat)

h_FE

120

Transition frequency

180

2.0

MHz

f_T

(V_CE= 12 V, I_E= – 2mA, f =30MHz )

Output capacitance

3.5

C_ob

(V_CB= 12 V, I_E= 0A, f =1MHz )

h_FEvalues are classified as follows:

h_EF

120~270

180~390

270~560

2010. 01. 18

Revision No : 1

1/3

12 3

中文翻译

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