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FT28HC256PMB-90 PDF预览

FT28HC256PMB-90

更新时间: 2022-10-12 13:40:48
品牌 Logo 应用领域
福思力 - FORCE 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
23页 2123K
描述
5 Volt, Byte Alterable EEPROM

FT28HC256PMB-90 数据手册

 浏览型号FT28HC256PMB-90的Datasheet PDF文件第1页浏览型号FT28HC256PMB-90的Datasheet PDF文件第2页浏览型号FT28HC256PMB-90的Datasheet PDF文件第4页浏览型号FT28HC256PMB-90的Datasheet PDF文件第5页浏览型号FT28HC256PMB-90的Datasheet PDF文件第6页浏览型号FT28HC256PMB-90的Datasheet PDF文件第7页 
FT28HC256  
DEVICE OPERATION  
Read  
Write Operation Status Bits  
The FT28HC256 provides the user two write operation  
status bits. These can be used to optimised a system  
write cycle time. The status bits are mapped onto the  
I/O bus as shown in Figure 1.  
Read operations are initiated by both OE and CE LOW.  
The read operation is terminated by either CE or OE  
returning HIGH. This two line control architecture elimi-  
nates bus contention in a system environment. The  
data bus will be in a high impedance state when either  
OE or CE is HIGH.  
Figure 1. Status Bit Assignment  
I/O DP TB  
5
4
3
2
1
0
Write  
Write operations are initiated when both CE and WE  
are LOW and OE is HIGH. The FT28HC256 suppor ts  
both a CE and WE controlled write cycle. That is, the  
address is latched b y the f alling edge of either CE or  
WE, whiche ver occurs last. Similarly, the data is  
latched internally by the rising edge of either CE or  
WE, which ever occurs first A byte write operation,  
once initiated, will automatically continue to comple-  
tion, typically within 3ms.  
Reserved  
Toggle Bit  
DATA Polling  
DATA Polling (I/O )  
7
The FT28HC256 features DATA Polling as a method to  
indicate to the host system that the byte write or page  
write cycle has completed. DATA Polling allows a sim-  
ple bit test operation to determine the status of the  
FT28HC256. This eliminates additional interrupt inputs  
or external hardware. During the internal programming  
cycle, any attempt to read the last byte written will pro-  
Page Write Operation  
The page write feature of the FT28HC256 allows the  
entire memory to be written in typically 0.8 seconds .  
Page wr ite allows up to one hundred twenty-eight  
bytes of data to be consecutively written to the  
FT28HC256, prior to the commencement of the inter nal  
programming cycle . The host can fetch data from  
another device within the system during a page write  
operation (change the source address), but the page  
duce the complement of that data on I/O  
data = 0xxx xxxx, read data = 1xxx xxxx).  
(i.e., write  
Once the  
7
programming cycle is complete , I/O will reflect true  
7
data.  
Toggle Bit (I/O )  
6
address (A through A ) for each subsequent valid  
7
14  
The FT28HC256 also provides another method for  
determining when the internal write cycle is complete .  
During the internal programming cycle I/O will toggle  
write cycle to the part during this operation must be the  
same as the initial page address.  
6
The page write mode can be initiated dur ing any write  
operation. Following the initial byte write cycle, the host  
can write an additional one to one hundred twenty-  
seven bytes in the same manner as the first byte was  
written. Each successive byte load cycle , started b y  
the WE HIGH to LO W tr ansition, m ust begin within  
100µs of the falling edge of the preceding WE. If a sub-  
sequent WE HIGH to LOW transition is not detected  
within 100µs , the internal automatic programming  
cycle will commence . There is no page write window  
limitation. Effectively the page write window is infinitel  
wide, so long as the host continues to access the  
device within the byte load cycle time of 100µs.  
from HIGH to LOW and LOW to HIGH on subsequent  
attempts to read the device. When the internal cycle is  
complete the toggling will cease, and the device will be  
accessible for additional read and write operations.  
Characteristics subject to change without notice. 3 of 23  
REV 1.0  

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