Datasheet > FT28HC256SMB-12

FT28HC256SMB-12

更新时间： 2022-10-12 13:40:48

品牌	Logo	应用领域
福思力 - FORCE		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
23页	2123K
描述
5 Volt, Byte Alterable EEPROM

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FT28HC256SMB-12 数据手册

256k 32k X 8 bit

FT28HC256

5 Volt, Byte Alterable EEPROM

FEATURES

DESCRIPTION

• Access time: 90ns

• Simple byte and page write

—Single 5V supply

The FT28HC256 is a second generation high perfor-

mance 32K x 8 EEPROM.

—No external high voltages or V control circuits

—Self-timed

—No erase before write

—No complex programming algorithms

—No overerase problem

• Low power CMOS

The FT28HC256 supports a 128-byte page write opera-

tion, effectively providing a 24µs/byte write cycle, and

enabling the entire memory to be typically rewritten in

less than 0.8 seconds. The FT28HC256 also features

DATA Polling and Toggle Bit Polling, two methods of

providing early end of write detection. The FT28HC256

also supports the JEDEC standard Software Data Pro-

tection feature for protecting against inadvertent writes

during power-up and power-down.

—Active: 60mA

—Standby: 500µA

• Software data protection

—Protects data against system level inadvertent

writes

• High speed page write capability

• Highly reliable direct Write

—Endurance: 1,000,000 cycles

—Data retention: 100 years

• Early end of write detection

—DATA polling

Endurance for the FT28HC256 is specified as a mini-

mum 1,000,000 writecycles per byte and an inherent

data retention of 100 years.

—Toggle bit polling

BLOCK DIAGRAM

256Kbit

EEPROM

Array

X Buffers

Latches and

Decoder

A –A

Address

Inputs

I/O Buffers

and Latches

Y Buffers

Latches and

DECODER

I/O –I/O

Control

Logic and

Timing

Data Inputs/Outputs

Characteristics subject to change without notice. 1 of 23

REV 1.0

12 3 4 5 6 7...23

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