FT29F010B
Uniform Sector Flash Memory
CMOS 5.0 Volt-only
1 Megabit (128 K x 8-bit)
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 5.0 V ꢀ0% for read, erase, and program operations
— Simplifies system-level power requirements
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
■ Manufactured on 0.32 µm process technology
— Embedded Program algorithm automatically
programs and verifies data at specified address
— Compatible with FT29F0ꢀ0 and FT29F0ꢀ0A
device
■ Erase Suspend/Resume
■ High performance
— Supports reading data from a sector not
being erased
— 90 ns maximum access time
■ Low power consumption
■ Minimum 1 million erase cycles guaranteed per
— ꢀ2 mA typical active read current
— 30 mA typical program/erase current
— <ꢀ µA typical standby current
sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package options
■ Flexible sector architecture
— Eight ꢀ6 Kbyte sectors
— 32-pin LCC/CLCC
— 32-pin FP/FFP
— Any combination of sectors can be erased
— Supports full chip erase
— 32-pin CDIP/CSOJ
—
32-pin PLCC
■ Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
Rev 2
1/30
2014