Datasheet > FT29F010B120E-S-S

FT29F010B120E-S-S

更新时间： 2022-05-14 22:01:32

品牌	Logo	应用领域
福思力 - FORCE		/
页数	文件大小	规格书
30页	2137K
描述
1 Megabit (128 K x 8-bit) Uniform Sector Flash Memory CMOS 5.0 Volt-only

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FT29F010B

Uniform Sector Flash Memory

CMOS 5.0 Volt-only

1 Megabit (128 K x 8-bit)

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 V ꢀ0% for read, erase, and program operations

— Simplifies system-level power requirements

— Embedded Erase algorithm automatically

pre-programs and erases the chip or any

combination of designated sector

■ Manufactured on 0.32 µm process technology

— Embedded Program algorithm automatically

programs and verifies data at specified address

— Compatible with FT29F0ꢀ0 and FT29F0ꢀ0A

device

■ Erase Suspend/Resume

■ High performance

— Supports reading data from a sector not

being erased

— 90 ns maximum access time

■ Low power consumption

■ Minimum 1 million erase cycles guaranteed per

— ꢀ2 mA typical active read current

— 30 mA typical program/erase current

— <ꢀ µA typical standby current

sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

■ Flexible sector architecture

— Eight ꢀ6 Kbyte sectors

— 32-pin LCC/CLCC

— 32-pin FP/FFP

— Any combination of sectors can be erased

— Supports full chip erase

— 32-pin CDIP/CSOJ

—

32-pin PLCC

■ Sector protection

— Hardware-based feature that disables/re-

enables program and erase operations in any

combination of sectors

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— Sector protection/unprotection can be

implemented using standard PROM

programming equipment

— Superior inadvertent write protection

■ Data# Polling and Toggle Bits

— Provides a software method of detecting

program or erase cycle completion

Rev 2

1/30

2014

12 3 4 5 6 7...30

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