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FSS430D3

更新时间： 2024-11-29 20:28:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 117K
描述
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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FSS430D3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.79
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：3 A最大漏极电流 (ID)：3 A
最大漏源导通电阻：2.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-257AAJESD-30 代码：R-MSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：20 W最大脉冲漏极电流 (IDM)：9 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSS430D3 数据手册

 浏览型号FSS430D3的Datasheet PDF文件第2页浏览型号FSS430D3的Datasheet PDF文件第3页浏览型号FSS430D3的Datasheet PDF文件第4页浏览型号FSS430D3的Datasheet PDF文件第5页浏览型号FSS430D3的Datasheet PDF文件第6页浏览型号FSS430D3的Datasheet PDF文件第7页 
FSS430D, FSS430R  
3A, 500V, 2.70 Ohm, Rad Hard,  
SEGR Resistant, N-Channel Power MOSFETs  
December 2001  
Features  
• 3A, 500V, r  
• Total Dose  
Description  
= 2.70Ω  
The Discrete Products Operation of Fairchild Corporation  
has developed a series of Radiation Hardened MOSFETs  
specifically designed for commercial and military space  
DS(ON)  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
applications. Enhanced Power MOSFET immunity to Single  
Event Effects (SEE), Single Event Gate Rupture (SEGR) in  
particular, is combined with 100K RADS of total dose hard-  
ness to provide devices which are ideally suited to harsh  
space environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Fairchild portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant.The MOSFET is well suited for applications exposed  
to radiation environments such as switching regulation,  
switching converters, motor drives, relay drivers and drivers  
for high-power bipolar switching transistors requiring high  
speed and low gate drive power. This type can be operated  
directly from integrated circuits.  
• Photo Current  
- 8.0nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E12 Neutrons/cm  
2
2
- Usable to 3E13 Neutrons/cm  
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Fairchild for any desired deviations  
from the data sheet.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSS430D1  
FSS430D3  
FSS430R1  
FSS430R3  
FSS430R4  
10K  
Symbol  
D
100K  
100K  
100K  
Commercial  
TXV  
Space  
G
Formerly available as type TA17639.  
S
Package  
TO-257AA  
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
©2001 Fairchild Semiconductor Corporation  
FSS430D, FSS430R Rev. B  
1234567...9

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