Datasheet > FSS430R1

FSS430R1

更新时间： 2024-11-28 22:36:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	49K
描述
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSS430R1 数据手册

FSS430D, FSS430R

3A, 500V, 2.70 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 3A, 500V, r

• Total Dose

= 2.70Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 8.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E12 Neutrons/cm

- Usable to 3E13 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS430D1

FSS430D3

FSS430R1

FSS430R3

FSS430R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17639.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4060.2

3-89

12 3 4 5 6 7 8

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与FSS430R1相关器件

型号	品牌	获取价格	描述	数据表
FSS430R3	INTERSIL	获取价格	3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS430R3	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal
FSS430R4	INTERSIL	获取价格	3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS52	FOX	获取价格	HCMOS 5x3.2mm 2.5V SMD Oscillator
FSS52BCA-106.25	FOX	获取价格	HCMOS Output Clock Oscillator, 106.25MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
FSS52BCA-13.000	FOX	获取价格	HCMOS Output Clock Oscillator, 13MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
FSS52BCAR-13.000	FOX	获取价格	HCMOS Output Clock Oscillator, 13MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
FSS52BCAR-160.00	FOX	获取价格	HCMOS Output Clock Oscillator, 160MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
FSS52BCAR-160.000	FOX	获取价格	HCMOS Output Clock Oscillator, 160MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
FSS52BCB-13.00	FOX	获取价格	HCMOS Output Clock Oscillator, 13MHz Nom, ROHS COMPLIANT, SMD, 4 PIN

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