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FS70SMH-03 PDF预览

FS70SMH-03

更新时间: 2024-02-23 07:55:30
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 41K
描述
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

FS70SMH-03 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):70 A
最大漏极电流 (ID):70 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:70 W
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS70SMH-03 数据手册

 浏览型号FS70SMH-03的Datasheet PDF文件第2页浏览型号FS70SMH-03的Datasheet PDF文件第3页浏览型号FS70SMH-03的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS70SMH-03  
HIGH-SPEED SWITCHING USE  
FS70SMH-03  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9MAX.  
1.5  
r
f 3.2  
2
4.4  
G
1.0  
q
w
e
5.45  
5.45  
0.6  
2.8  
4
w r  
¡2.5V DRIVE  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
¡VDSS .................................................................................. 30V  
¡rDS (ON) (MAX) .............................................................. 14m  
¡ID ......................................................................................... 70A  
¡Integrated Fast Recovery Diode (TYP.) ............. 70ns  
q
e
TO-3P  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
30  
±10  
V
70  
A
IDM  
IDA  
Drain current (Pulsed)  
280  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
70  
70  
A
IS  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
280  
A
PD  
70  
W
°C  
°C  
g
Tch  
Tstg  
–55 ~ +150  
–55 ~ +150  
4.8  
Storage temperature  
Weight  
Typical value  
Feb.1999  

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