Datasheet > FS28MR12W1M1H_B11

FS28MR12W1M1H_B11

更新时间： 2024-04-09 19:01:42

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FS28MR12W1M1H_B11

™

EasyPACK module

3 Body diode (MOSFET)

Table 5

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

0.47

Unit

Min.

Max.

Turn-on energy loss per

pulse

E_on

I_D= 30 A, V_DD= 600 V,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

L = 35 nH, V_GS= -3/18 V,

0.589

0.661

0.112

0.121

0.123

1.4

R_Gon= 6.2 Ω, di/dt = 2.7

kA/µs (T_vj= 175 °C)

Tuꢀn-oﬀ energy loss per

pulse

E_oﬀ

I_D= 30 A, V_DD= 600 V,

L = 35 nH, V_GS= -3/18 V,

R_Goﬀ= 5.1 Ω, dv/dt = 25

kV/µs (T_vj= 175 °C)

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per MOSFET, λ_grease= 1 W/(m·K)

K/W

°C

Temperature under

switching conditions

-40

175

Note:

The selection of positive and negative gate-source voltages impacts losses and the long-term behavior

of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN

2021-13 must be considered to ensure sound operation of the device over the planned lifetime.

T_vj,op> 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed

specifications, please refer to AN 2021-13.

Body diode (MOSFET)

Table 6

Maximum rated values

Parameter

Symbol Note or test condition

I_SDT_vj= 175 °C, V_GS= -3 V

Values

Unit

DC body diode forward

current

T_H= 80 °C

Table 7

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

4.2

Unit

Min.

Max.

Forward voltage

V_SD

I_SD= 30 A, V_GS= -3 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

5.35

3.9

3.8

Datasheet

Revision 0.20

2023-02-28

1 2 3 456 7 8...16

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