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FS1210BH PDF预览

FS1210BH

更新时间: 2024-11-10 23:52:51
品牌 Logo 应用领域
其他 - ETC 可控硅
页数 文件大小 规格书
4页 133K
描述
Standard Gate SCRs

FS1210BH 数据手册

 浏览型号FS1210BH的Datasheet PDF文件第2页浏览型号FS1210BH的Datasheet PDF文件第3页浏览型号FS1210BH的Datasheet PDF文件第4页 
FS12...H  
STANDARD SCR  
TO220-AB  
On-State Current  
Gate Trigger Current  
12 Amp  
> 0.5 mA to < 25 mA  
Off-State Voltage  
200 V ÷ 600 V  
These series of Silicon Controlled  
Rectifier use a high performance  
PNPN technology.  
K
These parts are intended for general  
purpose high current applications where  
moderate gate insensitivity is required.  
A
G
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
180º Conduction Angle, Tc = 110 ºC  
Half Cycle, Q = 180 º, TC = 110 ºC  
Half Cycle, 60 Hz  
12  
8
A
A
IT(RMS)  
Average On-state Current  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
IT(AV)  
ITSM  
ITSM  
I2t  
154  
140  
98  
A
Half Cycle, 50 Hz  
A
A2s  
tp = 10ms, Half Cycle  
VGRM  
IGM  
PGM  
PG(AV)  
Tj  
Peak Reverse Gate Voltage  
Peak Gate Current  
I
GR = 10 µA  
8
V
20 µs max.  
20 µs max.  
20ms max.  
4
A
Peak Gate Dissipation  
Gate Dissipation  
10  
W
W
ºC  
ºC  
ºC  
1
Operating Temperature  
Storage Temperature  
-40  
-40  
+125  
+150  
260  
Tstg  
Tsld  
Soldering Temperature  
10s max.  
SYMBOL  
PARAMETER  
CONDITIONS  
VOLTAGE  
Unit  
V
B
D
M
RGK = 1 KW  
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Dec - 02  

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