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FS0101MA PDF预览

FS0101MA

更新时间: 2024-11-04 23:52:51
品牌 Logo 应用领域
其他 - ETC 可控硅
页数 文件大小 规格书
4页 147K
描述
Sensitive Gate SCRs

FS0101MA 数据手册

 浏览型号FS0101MA的Datasheet PDF文件第2页浏览型号FS0101MA的Datasheet PDF文件第3页浏览型号FS0101MA的Datasheet PDF文件第4页 
FS01...A/B  
SENSITIVE GATE SCR  
TO92  
(Plastic)  
RD26  
(Plastic)  
On-State Current  
0.8 Amp  
Gate Trigger Current  
< 200 µA  
Off-State Voltage  
200 V ÷ 600 V  
K
A
G
G
A
K
This series of Silicon Controlled Rectifiers  
uses a high performance  
PNPN technology.  
FS01...A  
FS01...B  
This part is intended for general purpose  
applications where high gate sensitivity is  
required.  
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, TL = 55 ºC  
0.8  
0.5  
8
A
A
IT(RMS)  
Average On-state Current  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
Half Cycle, Q = 180 º, TL = 55 ºC  
IT(AV)  
ITSM  
ITSM  
I2t  
VGRM  
IGM  
PGM  
PG(AV)  
Tj  
Tstg  
Tsld  
Half Cycle, 60 Hz, T  
Half Cycle, 50 Hz, T  
tp = 10ms, Half Cycle  
GR = 10 µA  
j
= 25 ºC  
A
j
= 25º C  
7
A
A2s  
0.24  
8
Peak Reverse Gate Voltage  
Peak Gate Current  
I
V
1
A
20 µs max.  
20 µs max.  
20ms max.  
Peak Gate Dissipation  
Gate Dissipation  
2
W
W
ºC  
ºC  
ºC  
0.1  
Operating Temperature  
Storage Temperature  
-40  
-40  
+125  
+150  
260  
Soldering Temperature  
1.6 mm from case, 10s max.  
SYMBOL  
PARAMETER  
CONDITIONS  
VOLTAGE  
Unit  
V
B
D
M
RGK = 1 KW  
Repetitive Peak Off State  
Voltage  
VDRM  
VRRM  
200  
400  
600  
Jul - 02  

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