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FR603S(G) PDF预览

FR603S(G)

更新时间: 2024-11-14 20:41:11
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
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FR603S(G) 技术参数

Case Style:DO-27IVA(A):6.0
VRRM (V):200IFSM (A):300
VF (V):1.3@IVA(A):6.0
Maximum reverse current:10.0TRR(nS):150
class:Diodes

FR603S(G) 数据手册

 浏览型号FR603S(G)的Datasheet PDF文件第2页 
FR601S-FR607S  
Fast Recovery Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 6.0 A  
DO - 27  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC DO-27,molded plastic  
Polarity: Color band denotes cathode  
Weight:0.041 unces,1.15 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
FR  
601S  
FR  
602S  
FR  
603S  
FR  
604S  
FR  
605S  
FR  
FR  
UNITS  
606S 607S  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
6.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
300.0  
1.3  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 6.0 A  
V
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
A
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
200.0  
150  
250  
500  
ns  
trr  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
150  
12  
CJ  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55---- +150  
- 55---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied reverse v oltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
http://www.lgesemi.com  
Revision:20170301-P1  
mail:lge@lgesemi.com  

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