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FR101G-E PDF预览

FR101G-E

更新时间: 2024-11-10 10:23:39
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管快速恢复二极管
页数 文件大小 规格书
2页 89K
描述
FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE: 50 to 1000V CURRENT: 1.0A

FR101G-E 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.02Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:50 V最大反向恢复时间:0.15 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

FR101G-E 数据手册

 浏览型号FR101G-E的Datasheet PDF文件第2页 
FR101G-E THRU FR107G-E  
FAST RECOVERY  
GLASS PASSIVATED RECTIFIER  
VOLTAGE: 50 to 1000V  
CURRENT: 1.0A  
DO- 41\DO-204AL  
FEATURE  
Molded case feature for auto insertion  
High current capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
Fast switching for high efficiency  
Glass passivated junction  
Halogen Free  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Halogen Free  
Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
FR10 FR10 FR10 FR10 FR10 FR10 FR10  
SYMBOL  
units  
1G-E 2G-E 3G-E 4G-E 5G-E 6G-E 7G-E  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
70  
Maximum DC blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
3/8”lead length at Ta =75°C  
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25°C  
If(av)  
Ifsm  
Vf  
1.0  
30.0  
1.3  
A
A
V
5.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25℃  
Ta =100℃  
Ir  
µA  
100.0  
Trr  
Cj  
150  
250  
500  
nS  
pF  
Maximum Reverse Recovery Time  
Typical Junction Capacitance  
(Note 1)  
(Note 2)  
15.0  
50.0  
Typical Thermal Resistance  
(Note 3)  
Rth(ja)  
Tstg,Tj  
/W  
Storage and Operating Junction Temperature  
Note:  
-50 to +150  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  

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