Datasheet > FP100

FP100

更新时间： 2024-11-10 22:32:03

品牌	Logo	应用领域
FILTRONIC		连接器
页数	文件大小	规格书
2页	36K
描述
HIGH PERFORMANCE PHEMT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FP100 数据手册

PRELIMINARY DATA SHEET

FP 100

HIGH P ERFORMANCE P HEMT

· FEATURES

14 dBm P-1dB at 12 GHz

9 dB Power Gain at 12 GHz

3.0 dB Noise Figure at 12 GHz

DIE SIZE: 16.5 x 16.5 mils (420 x 420 mm)

DIE THICKNESS: 3.9 mils (100 mm typ.)

BONDING PADS: 3.3 x 3.5 mils (85 x 90 mm typ.)

· DESCRIPTION AND APPLICATIONS

The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.

Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz

range. The device is well-suited for telecommunication applications.

· ELECTRICAL SPECIFICATIONS @ T_Ambient= 22 ± 3 °C

Parameter

Symbol

Test Conditions

Min

Typ Max Units

Output Power @

P_1dB

f = 12 GHz; V_DS= 5V; I_DS= 50% I_DSS

dBm

1dB Compression

1dB

f = 12 GHz; V_DS= 5V; I_DS= 50% I_DSS

Power Gain @

1dB Compression

Maximum Available Gain

Noise Figure

MAG

f = 12 GHz; V_DS= 5V; I_DS= 50% I_DSS

14.5

15.5

3.0

Power-Added Efficiency

f = 12 GHz; V_DS= 5V; I_DS= 50% I_DSS

P_OUT= 15.5 dBm

;

Saturated Drain-Source Current

Transconductance

I_DSS

G_M

V_P

V_DS= 2 V; V_GS= 0 V

V_DS= 2 V; I_DS= 1 mA

Pinch-Off Voltage

-0.50

-2.5

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

|V_BDGS

|I_GSL

I_GS= 1 mA

V_GS= -5 V

10.5

Gate-Source Breakdown

Voltage Magnitude

Gate-Source Leakage

Current Magnitude

Phone: (408) 988-1845

Fax: (408) 970-9950

http:// www.filss.com

Email: sales@filss.com

Revised: 07/18/01

中文翻译

下载PDF

与FP100相关器件

型号	品牌	获取价格	描述	数据表
FP-1000	FUJITSU	获取价格	FUJITSU THERMAL PRINTER
FP1005R	EATON	获取价格	High frequency, high current power inductors
FP1005R1-R08-R	COOPER	获取价格	High Current, High Frequency, Low-Profile Power Inductors
FP1005R1-R08-R	EATON	获取价格	High frequency, high current power inductors
FP1005R1-R10-R	COOPER	获取价格	High Current, High Frequency, Low-Profile Power Inductors
FP1005R1-R10-R	EATON	获取价格	High frequency, high current power inductors
FP1005R1-R12-R	COOPER	获取价格	High Current, High Frequency, Low-Profile Power Inductors
FP1005R1-R12-R	EATON	获取价格	High frequency, high current power inductors
FP1005R1-R15-R	COOPER	获取价格	High Current, High Frequency, Low-Profile Power Inductors
FP1005R1-R15-R	EATON	获取价格	High frequency, high current power inductors