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FOD8318V PDF预览

FOD8318V

更新时间: 2024-10-28 11:10:35
品牌 Logo 应用领域
安森美 - ONSEMI 驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
29页 550K
描述
2.5 A 输出电流,IGBT 驱动光耦合器,带有源米勒箝位、去饱和检测和隔离故障传感

FOD8318V 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
Factory Lead Time:24 weeks风险等级:1.92
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:10.3 mm湿度敏感等级:1
功能数量:1端子数量:16
最高工作温度:100 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:3 mm
最大供电电压:5.5 V最小供电电压:3 V
标称供电电压:5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.5 µs接通时间:0.5 µs
宽度:7.5 mmBase Number Matches:1

FOD8318V 数据手册

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DATA SHEET  
www.onsemi.com  
2.5 A Output Current, IGBT  
Drive Optocoupler with  
Active Miller Clamp,  
SOIC16 W  
CASE 751EN  
Desaturation Detection,  
and Isolated Fault Sensing  
MARKING DIAGRAM  
FOD8318  
ON  
Description  
8318  
V
J
The FOD8318 is an advanced 2.5 A output current IGBT drive  
optocoupler capable of driving most 1200 V / 150 A IGBTs. It is  
ideally suited for fastswitching driving of power IGBTs and  
MOSFETs used in motor control inverter applications and  
highperformance power systems. It consists of an integrated gate  
D X YY KK  
8318 = Device Number, e.g., ‘8318’ for FOD8318  
drive optocoupler featuring low R  
CMOS transistors to drive  
V
= DIN EN/IEC6074755 Option (Only Appears  
on Component Ordered with this Option)  
= Plant code, e.g., ‘D’  
DS(ON)  
the IGBT from rail to rail and an integrated highspeed isolated  
feedback for fault sensing. The FOD8318 has an active Miller clamp  
fuction to shut off the IGBT during a high dv/dt situation without the  
need of a negative supply voltage. It offers critical protection features  
necessary for preventing fault conditions that lead to destructive  
thermal runaway of IGBTs.  
D
X
= Lastdigit Year Code, e.g., ‘B’ for 2011  
YY = Twodigit Work Week Ranging from ‘01’ to ‘53’  
KK = Lot Traceability Code  
J
= Package Assembly Code, J  
®
It utilizes onsemi’s proprietary OPTOPLANAR coplanar  
packaging technology and optimized IC design to achieve high noise  
immunity, characterized by high common mode rejection and power  
supply rejection specifications.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 27 of  
this data sheet.  
The device is housed in a compact 16pin small outline plastic  
package that meets the 8 mm creepage and clearance requirements.  
Features (continued)  
Features  
Extended Industrial Temperate Range,  
40°C to 100°C Temperature Range  
Safety and Regulatory Approvals  
High Noise Immunity Characterized by Common Mode Rejection  
35 kV / ms Minimum Common Mode Rejection  
(Vcm = 1500 V  
)
peak  
2.5 A Peak Output Current Driving Capability for Most 1200 V /  
150 A IGBT  
UL1577, 4,243 V  
for 1 min.  
RMS  
DIN EN/IEC 6074755,1,414 V  
peak  
Working Insulation Voltage, 8000 V  
Transient Isolation Voltage Ratings  
Optically Isolated Fault Sensing Feedback  
Active Miller Clamp to Shut Off the IGBT During High dv/dt  
without Needing a Negative Supply Voltage  
“Soft” IGBT Turnoff  
peak  
R  
of 1 W (Typ.) Offers Lower Power  
DS(ON)  
Dissipation  
User Configurable: Inverting, Noninverting,  
Autoreset, Autoshutdown  
8 mm Creepage and Clearance Distances  
Builtin IGBT Protection  
Desaturation Detection  
Undervoltage Lock Out (UVLO) Protection  
Wide Supply Voltage Range from 15 V to 30 V  
Applications  
Use of PChannel MOSFETs at Output Stage Enables Output  
Voltage Swing Close to the Supply Rail (Railtorail Output)  
Industrial Inverter  
Induction Heating  
Isolated IGBT Drive  
3.3 V / 5 V, CMOS/TTLcompatible Inputs  
High Speed  
250 ns Max. Propagation Delay over Full Operating  
Temperature Range  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
January, 2023 Rev. 4  
FOD8318/D  

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