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FMS6G20US60 PDF预览

FMS6G20US60

更新时间: 2024-11-22 22:20:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 780K
描述
Compact & Complex Module

FMS6G20US60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-XUFM-P25针数:25
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7外壳连接:ISOLATED
最大集电极电流 (IC):20 A集电极-发射极最大电压:600 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-P25JESD-609代码:e3
元件数量:6端子数量:25
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):89 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:PIN/PEG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):320 ns标称接通时间 (ton):170 ns
VCEsat-Max:2.7 VBase Number Matches:1

FMS6G20US60 数据手册

 浏览型号FMS6G20US60的Datasheet PDF文件第2页浏览型号FMS6G20US60的Datasheet PDF文件第3页浏览型号FMS6G20US60的Datasheet PDF文件第4页浏览型号FMS6G20US60的Datasheet PDF文件第5页浏览型号FMS6G20US60的Datasheet PDF文件第6页浏览型号FMS6G20US60的Datasheet PDF文件第7页 
August 2005  
FMS6G20US60  
Compact & Complex Module  
Features  
Description  
Short Circuit Rated 10µs @ T = 100°C, V = 15V  
Fairchild IGBT Power Module provides low conduction and  
switching losses as well as short circuit ruggedness. It’s  
designed for the applications such as motor control and general  
inverters where short-circuit ruggedness is required.  
C
GE  
High Speed Switching  
Low Saturation Voltage : V (sat) = 2.1 V @ I = 20A  
CE  
C
High Input Impedance  
Built-in 3 Phase Rectifier Circuit  
Fast & Soft Anti-Parallel FWD  
Built-in NTC Thermistor  
Application  
AC & DC Motor Controls  
General Purpose Inverters  
Robotics  
Servo Controls  
4
5
19  
17  
21  
20  
22  
23  
24  
18  
13  
16  
14  
15  
8
7
10  
9
3
6
NTC  
11  
12  
Package Code : 25PM-AA  
Internal Circuit Diagram  
©2005 Fairchild Semiconductor Corporation  
FMS6G20US60 Rev. B1  
1
www.fairchildsemi.com  

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