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FMS4

更新时间: 2024-11-08 22:40:55
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
1页 57K
描述
General purpose (dual transistors)

FMS4 数据手册

  
FMS3 / FMS4 / IMT4  
Transistors  
General purpose (dual transistors)  
FMS3 / FMS4 / IMT4  
!Features  
!External dimensions (Units : mm)  
1) Two 2SA1514K chips in an AMT package.  
2) High breakdown voltage.  
FMS3  
1.6  
2.8  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
120  
120  
5  
50  
300 (TOTAL)  
150  
0.3to0.6  
V
Each lead has same dimensions  
ROHM : SMT5  
EIAJ : SC-74A  
V
I
C
mA  
mW  
˚C  
˚C  
Power dissipation  
Pc  
Tj  
Junction temperature  
Storage temperature  
Tstg  
55∼+150  
FMS4  
200mW per element must not be exceeded.  
1.6  
2.8  
!Package, marking, and Packaging specifications  
Part No.  
Package  
Marking  
FMS3  
SMT5  
S3  
FMS4  
SMT5  
S4  
IMT4  
SMT6  
T4  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT5  
EIAJ : SC-74A  
T148  
3000  
T148  
3000  
T108  
3000  
Code  
Basic ordering unit (pieces)  
IMT4  
!Circuit diagram  
FMS3  
1.6  
2.8  
FMS4  
IMT4  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
120  
120  
5  
180  
140  
0.5  
0.5  
820  
V
V
I
I
I
C
=
=
50µA  
1mA  
C
V
E
=
50µA  
100V  
4V  
6V, I  
12V, I  
10mA/1mA  
I
CBO  
EBO  
FE  
µA  
µA  
MHz  
V
V
V
V
V
CB  
=
Emitter cutoff current  
I
EB  
=
DC current transfer ratio  
h
CE  
=
=
C
2mA  
Transition frequency  
f
T
CE  
E
=
2mA, f  
=
100MHz  
Collector-emitter saturation voltage  
V
CE(sat)  
0.5  
IC/IB=  
Transition frequency of the device.  

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