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FMD6S PDF预览

FMD6S

更新时间: 2024-11-17 22:32:03
品牌 Logo 应用领域
RECTRON 快速恢复二极管
页数 文件大小 规格书
2页 266K
描述
SINGLE-PHASE GLASS PASSIVATED MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere)

FMD6S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.72最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.5 µs
子类别:Bridge Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FMD6S 数据手册

 浏览型号FMD6S的Datasheet PDF文件第2页 
FMD1S  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
FMD7S  
SINGLE-PHASE GLASS PASSIVATED  
MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere  
FEATURES  
* Surge overload rating - 30 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
MD-S  
* Weight: 0.5 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in millimeters  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
FMD1S FMD2S FMD3S FMD4S FMD5S FMD6S FMD7S UNITS  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
DC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
V
100  
1000  
Maximum Average Forward Output Rectified  
= 30oC  
-on glass-epoxy P.C.B. ( NOTE 1 )  
-on aluminum substrate ( NOTE 2 )  
0.5  
0.8  
Current T  
A
IO  
Amp  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
30  
Amps  
Typical Junction Capacitance ( Note3 )  
Operating and Storage Temperature Range  
C
J
15  
pF  
0C  
T
J,T  
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T  
CHARACTERISTICS  
Maximum Forward Voltage Drop per Bridge  
A
= 25oCunless otherwise noted)  
SYMBOL  
FMD1S FMD2S FMD3S FMD4S FMD5S FMD6S FMD7S UNITS  
VF  
1.30  
Volts  
Element at 0.4A DC  
Maximum Reverse Current at rated  
DC Blocking Voltage per element  
Maximum Reverse Recovery Time ( Note 4 )  
@T  
A
A
= 25oC  
uAmps  
10  
I
R
= 125oC  
100  
uAmps  
nSec  
@T  
trr  
150  
250  
500  
1998-8  
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.  
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.  
3. Measured at 1MHz and applied reverse voltage of 4.0 volts.  
4. Test Conditions: I  
F = 0.5A, IR = 1.0A, IRR = 0.25A.  
5. Suffix “-S” Surface Mount for Mini Dip Bridge.  

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