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FMD7S

更新时间： 2024-02-08 12:25:57
品牌 Logo 应用领域
RECTRON 整流二极管桥式整流二极管光电二极管快速恢复二极管
页数 文件大小 规格书
2页 266K
描述
SINGLE-PHASE GLASS PASSIVATED MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere)

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中文翻译

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FMD7S 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-G4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
最小击穿电压：1000 V配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
最大非重复峰值正向电流：30 A元件数量：4
相数：1端子数量：4
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：0.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大重复峰值反向电压：1000 V
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

FMD7S 数据手册

 浏览型号FMD7S的Datasheet PDF文件第2页 
FMD1S  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
FMD7S  
SINGLE-PHASE GLASS PASSIVATED  
MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere  
FEATURES  
* Surge overload rating - 30 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
MD-S  
* Weight: 0.5 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in millimeters  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
FMD1S FMD2S FMD3S FMD4S FMD5S FMD6S FMD7S UNITS  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
DC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
V
100  
1000  
Maximum Average Forward Output Rectified  
= 30oC  
-on glass-epoxy P.C.B. ( NOTE 1 )  
-on aluminum substrate ( NOTE 2 )  
0.5  
0.8  
Current T  
A
IO  
Amp  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
30  
Amps  
Typical Junction Capacitance ( Note3 )  
Operating and Storage Temperature Range  
C
J
15  
pF  
0C  
T
J,T  
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T  
CHARACTERISTICS  
Maximum Forward Voltage Drop per Bridge  
A
= 25oCunless otherwise noted)  
SYMBOL  
FMD1S FMD2S FMD3S FMD4S FMD5S FMD6S FMD7S UNITS  
VF  
1.30  
Volts  
Element at 0.4A DC  
Maximum Reverse Current at rated  
DC Blocking Voltage per element  
Maximum Reverse Recovery Time ( Note 4 )  
@T  
A
A
= 25oC  
uAmps  
10  
I
R
= 125oC  
100  
uAmps  
nSec  
@T  
trr  
150  
250  
500  
1998-8  
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.  
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.  
3. Measured at 1MHz and applied reverse voltage of 4.0 volts.  
4. Test Conditions: I  
F = 0.5A, IR = 1.0A, IRR = 0.25A.  
5. Suffix “-S” Surface Mount for Mini Dip Bridge.  
12

中文翻译

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FMD7S 替代型号

型号 品牌 替代类型 描述 数据表
CBRHD-10 CENTRAL

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