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FM93C66AEN PDF预览

FM93C66AEN

更新时间: 2024-11-05 20:15:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
13页 114K
描述
EEPROM, 256X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8

FM93C66AEN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.65
Is Samacsys:N其他特性:DATA RETENTION = 40 YEARS
备用内存宽度:8最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.817 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X16
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
串行总线类型:MICROWIRE最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.001 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

FM93C66AEN 数据手册

 浏览型号FM93C66AEN的Datasheet PDF文件第2页浏览型号FM93C66AEN的Datasheet PDF文件第3页浏览型号FM93C66AEN的Datasheet PDF文件第4页浏览型号FM93C66AEN的Datasheet PDF文件第5页浏览型号FM93C66AEN的Datasheet PDF文件第6页浏览型号FM93C66AEN的Datasheet PDF文件第7页 
July 2000  
FM93C66A  
4K-Bit Serial CMOS EEPROM  
(MICROWIRE™ Synchronous Bus)  
General Description  
Features  
FM93C66A is a 4096-bit CMOS non-volatile EEPROM organized  
as 256 x 16-bit array. This device features MICROWIRE interface  
which is a 4-wire serial bus with chipselect (CS), clock (SK), data  
input (DI) and data output (DO) signals. This interface is compat-  
ible to many of standard Microcontrollers and Microprocessors.  
This device offers a pin (ORG), using which, the user can select  
the format of the data (16-bit or 8-bit). If ORG is tied to GND, then  
8-bit format is selected, while if ORG is tied to VCC, then 16-bit  
format is selected. There are 7 instructions implemented on the  
FM93C66A for various Read, Write, Erase, and Write Enable/  
Disable operations. This device is fabricated using Fairchild  
Semiconductor floating-gate CMOS process for high reliability,  
high endurance and low power consumption.  
I Wide VCC 2.7V - 5.5V  
I User selectable organization  
x16 (ORG = 1)  
x8 (ORG = 0)  
I Typical active current of 200µA  
10µA standby current typical  
1µA standby current typical (L)  
0.1µA standby current typical (LZ)  
I No Erase instruction required before Write instruction  
I Self timed write cycle  
I Device status during programming cycles  
I 40 year data retention  
“LZ” and “L” versions of FM93C66A offer very low standby current  
making them suitable for low power applications. This device is  
offered in both SO and TSSOP packages for small space consid-  
erations.  
I Endurance: 1,000,000 data changes  
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP  
Functional Diagram  
VCC  
CS  
SK  
INSTRUCTION  
DECODER  
CONTROL LOGIC  
AND CLOCK  
GENERATORS  
INSTRUCTION  
REGISTER  
DI  
HIGH VOLTAGE  
GENERATOR  
AND  
PROGRAM  
TIMER  
ADDRESS  
REGISTER  
ORG  
DECODER  
EEPROM ARRAY  
16  
READ/WRITE AMPS  
16  
VSS  
DATA IN/OUT REGISTER  
16/8 BITS  
DO  
DATA OUT BUFFER  
1
© 2000 Fairchild Semiconductor International  
FM93C66A Rev. B.1  
www.fairchildsemi.com  

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