Datasheet > FM850-B

FM850-B

更新时间： 2024-11-05 22:40:55

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	82K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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技术参数
数据手册

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FM850-B 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

FM850-B 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM820-B THRU FM860-B

Silicon epitaxial planer type

Features

SMB

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.213(5.4)

0.197(5.0)

0.016(0.4) Typ.

For surface mounted applications.

0.142(3.6)

0.126(3.2)

Exceeds environmental standards of MIL-S-19500 /

228

0.173(4.4)

0.157(4.0)

Low leakage current.

0.075(1.9)

0.067(1.7)

0.040(1.0) Typ.

0.040 (1.0) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AA

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.00878 ounce, 0.293 gram

(AT T_A=25 C unless otherwise noted)

MAXIMUM RATINGS

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

8.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25 C

5.0

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

700

T_STG

-55

+150

Operating

V_RRM

V_RMS

V_R

V_F

MARKING

temperature

SYMBOLS

CODE

( C)

*1 Repetitive peak reverse voltage

*2 RMS voltage

(V)

FM820-B

FM830-B

FM840-B

FM850-B

FM860-B

SK82

SK83

SK84

SK85

SK86

0.65

*3 Continuous reverse voltage

*4 Maximum forward voltage

-55 to +125

0.70

中文翻译

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