FM4933
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM4937
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
*
Epoxy : Device has UL flammability classification 94V-0
(
)
0.067 1.70
(
)
)
0.110 2.79
(
)
0.051 1.29
(
0.086 2.18
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
0.091 2.31
(
)
)
0.067 1.70
(
0.059 1.50
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
0.035 0.89
(
0.004 0.102
(
)
)
0.209 5.31
(
0.185 4.70
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
FM4933
FM4934
100
FM4935
200
FM4936
400
FM4937
600
UNITS
Volts
Volts
Volts
Amps
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
50
35
50
RMS
70
140
280
420
Maximum DC Blocking Voltage
V
DC
O
100
200
400
600
Maximum Average Forward Rectified Current at T
A
= 55oC
I
1.0
Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
Amps
(Note 2) RθJL
(Note 3) RθJA
30
0C/W
0C/W
pF
Maximum Thermal Resistance
70
15
Typical Junction Capacitance (Note 1)
CJ
T
J
, TSTG
-65 to + 175
0 C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 25oC unless otherwise noted)
SYMBOL
FM4933
FM4934
FM4935
1.2
FM4936
FM4937
UNITS
Volts
V
F
A
= 55oC
50
uAmps
uAmps
= 25oC
= 125oC
I
R
5.0
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@T
@T
A
A
100
200
uAmps
nSec
trr
Maximum Reverse Recovery Time (Note 4)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2001-4
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 1.0A, VR = 30V.