5秒后页面跳转
FM25V02-DG PDF预览

FM25V02-DG

更新时间: 2024-01-07 12:20:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
18页 504K
描述
256Kb Serial 3V F-RAM Memory

FM25V02-DG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SOP, SOP8,.25
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.08
Is Samacsys:NJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8混合内存类型:N/A
湿度敏感等级:1功能数量:1
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.75 mm
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.0025 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

FM25V02-DG 数据手册

 浏览型号FM25V02-DG的Datasheet PDF文件第2页浏览型号FM25V02-DG的Datasheet PDF文件第3页浏览型号FM25V02-DG的Datasheet PDF文件第4页浏览型号FM25V02-DG的Datasheet PDF文件第5页浏览型号FM25V02-DG的Datasheet PDF文件第6页浏览型号FM25V02-DG的Datasheet PDF文件第7页 
FM25V02  
256Kb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
256K bit Ferroelectric Nonvolatile RAM  
Organized as 32,768 x 8 bits  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM25VN02)  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Voltage, Low Power  
NoDelay™ Writes  
Low Voltage Operation 2.0V 3.6V  
90 A Standby Current (typ.)  
5 A Sleep Mode Current (typ.)  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Up to 40 MHz Frequency  
Industry Standard Configurations  
Industrial Temperature -40 C to +85 C  
8-pin “Green”/RoHS SOIC Package  
8-pin “Green”/RoHS TDFN Package  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Write Protection Scheme  
Hardware Protection  
Software Protection  
identify a board or system. Both devices incorporate  
a read-only Device ID that allows the host to  
determine the manufacturer, product density, and  
product revision. The devices are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
Description  
The FM25V02 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Pin Configuration  
1
2
3
4
8
7
6
5
S
Q
VDD  
HOLD  
C
Unlike Serial Flash, the FM25V02 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers very high write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
W
VSS  
D
1
2
3
4
8
7
6
5
VDD  
/S  
Q
/HOLD  
C
D
/W  
VSS  
These capabilities make the FM25V02 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of Serial Flash can  
cause data loss.  
Top View  
Function  
Chip Select  
Write Protect  
Hold  
Pin Name  
/S  
/W  
/HOLD  
C
Serial Clock  
D
Q
VDD  
VSS  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
The FM25V02 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The devices use the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
technology. The FM25VN02 is offered with a unique  
serial number that is read-only and can be used to  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
Document Number: 001-84494 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 25, 2013  

与FM25V02-DG相关器件

型号 品牌 描述 获取价格 数据表
FM25V02-DGTR CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-DGTR RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-G CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-G RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-GTR CYPRESS 256Kb Serial 3V F-RAM Memory

获取价格

FM25V02-GTR RAMTRON 256Kb Serial 3V F-RAM Memory

获取价格