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FM25CL64B-G PDF预览

FM25CL64B-G

更新时间： 2024-01-09 07:42:32
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管PC
页数 文件大小 规格书
14页 302K
描述
64Kb Serial 3V F-RAM Memory

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FM25CL64B-G 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.38JESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：65536 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：8192 words字数代码：8000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压 (Vsup)：3.65 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL宽度：3.9 mm

FM25CL64B-G 数据手册

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Preliminary  
FM25CL64B  
64Kb Serial 3V F-RAM Memory  
Features  
64K bit Ferroelectric Nonvolatile RAM  
Sophisticated Write Protection Scheme  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 8,192 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
@ +75ºC)  
Low Power Consumption  
•
•
•
Low Voltage Operation 2.7-3.65V  
200 µA Active Current (1 MHz)  
3 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
•
•
•
Up to 20 MHz Frequency  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industry Standard Configuration  
•
•
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC and TDFN Packages  
Description  
Pin Configuration  
The FM25CL64B is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
CS  
SO  
WP  
VSS  
VDD  
HOLD  
SCK  
SI  
2
3
4
Top View  
The FM25CL64B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after each byte has  
been successfully transferred to the device. The next  
bus cycle may commence immediately without the  
need for data polling. In addition, the product offers  
substantial write endurance compared with other  
nonvolatile memories. The FM25CL64B is capable  
of supporting 1014 read/write cycles, or 100 million  
times more write cycles than EEPROM.  
1
2
3
4
8
7
6
5
VDD  
/CS  
SO  
/WP  
VSS  
/HOLD  
SCK  
SI  
Pin Name  
/CS  
Function  
Chip Select  
/WP  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
These capabilities make the FM25CL64B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
Ordering Information  
FM25CL64B-G  
The FM25CL64B provides substantial benefits to  
users of serial EEPROM as a hardware drop-in  
replacement. The FM25CL64B uses the high-speed  
SPI bus, which enhances the high-speed write  
“Green” 8-pin SOIC  
“Green” 8-pin SOIC,  
Tape & Reel  
FM25CL64B-GTR  
FM25CL64B-DG  
“Green”/RoHS 8-pin TDFN  
“Green”/RoHS 8-pin TDFN,  
Tape & Reel  
capability  
of  
F-RAM  
technology.  
Device  
FM25CL64B-DGTR  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.2  
Feb. 2011  
Page 1 of 14  
1234567...14

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