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FM25C160-GTR PDF预览

FM25C160-GTR

更新时间: 2024-01-23 16:41:53
品牌 Logo 应用领域
铁电 - RAMTRON 光电二极管内存集成电路
页数 文件大小 规格书
13页 297K
描述
Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25C160-GTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.06JESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:16384 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

FM25C160-GTR 数据手册

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FM25C160  
RDSR - Read Status Register  
WRSR – Write Status Register  
The RDSR command allows the bus master to verify  
the contents of the Status register. Reading Status  
provides information about the current state of the  
write protection features. Following the RDSR op-  
code, the FM25C160 will return one byte with the  
contents of the Status register. The Status register is  
described in detail in a later section.  
The WRSR command allows the user to select  
certain write protection features by writing a byte to  
the Status register. Prior to issuing a WRSR  
command, the /WP pin must be high or inactive. Note  
that on the FM25C160, /WP only prevents writing to  
the Status register, not the memory array. Prior to  
sending the WRSR command, the user must send a  
WREN command to enable writes. Note that  
executing a WRSR command is a write operation and  
therefore clears the Write Enable Latch. The bus  
timing for RDSR and WRSR are shown below.  
Figure 7. RDSR Bus Timing  
Figure 8. WRSR Bus Timing  
are nonvolatile (shaded yellow). The WEL flag  
Status Register & Write Protection  
indicates the state of the Write Enable Latch. This bit  
is internally set by the WREN command and is  
cleared by terminating a write cycle (/CS high) or by  
using the WRDI command.  
The write protection features of the FM25C160 are  
multi-tiered. First, a WREN op-code must be issued  
prior to any write operation. Assuming that writes are  
enabled using WREN, writes to memory are  
controlled by the Status register. As described above,  
writes to the status register are performed using the  
WRSR command and subject to the /WP pin. The  
Status register is organized as follows.  
BP1 and BP0 are memory block write protection bits.  
They specify portions of memory that are write  
protected as shown in the following table.  
Table 3. Block Memory Write Protection  
Table 2. Status Register  
BP1  
BP0 Protected Address Range  
Bit  
7
6
0
5
0
4
0
3
BP1  
2
BP0  
1
0
0
0
0
1
1
0
1
0
1
None  
Name WPEN  
WEL  
600h to 7FFh (upper ¼)  
400h to 7FFh (upper ½)  
000h to 7FFh (all)  
Bits 0 and 4-6 are fixed at 0 and cannot be modified.  
Note that bit 0 (/RDY in EEPROMs) is wired low  
since FRAM writes have no delay and the memory is  
never busy. All EEPROMs use Ready to indicate  
whether a write cycle is complete or not. The WPEN,  
BP1 and BP0 control write protection features. They  
Rev. 3.3  
Feb. 2011  
Page 6 of 13  

FM25C160-GTR 替代型号

型号 品牌 替代类型 描述 数据表
FM25C160-G RAMTRON

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Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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