Datasheet > FM25C160-G

FM25C160-G

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
铁电 - RAMTRON		光电二极管
页数	文件大小	规格书
13页	297K
描述
Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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FM25C160-G 数据手册

FM25C160

Figure 9. Memory Write

Figure 10. Memory Read

should not be located within the same row. In the

FM25C160, there are 512 rows each 32 bits wide.

Regardless, FRAM read and write endurance is

effectively unlimited at the 20 MHz clock speed.

Even at 2000 accesses per second to the same row, 15

years time will elapse before 10¹²endurance cycles

occur.

Endurance

Internally, a FRAM operates with a read and restore

mechanism similar to

DRAM. Therefore,

endurance cycles are applied for each access: read or

write. The FRAM architecture is based on an array of

rows and columns. Each access causes an endurance

cycle for an entire row. Therefore, data locations

targeted for substantially differing numbers of cycles

Rev. 3.3

Feb. 2011

Page 8 of 13

1...5 6 789 10 11...13

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型号	品牌	描述	获取价格	数据表
FM25C160-GA	RAMTRON	16Kb FRAM Serial Memory	获取价格
FM25C160-GTR	RAMTRON	Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8	获取价格
FM25C160-P	ETC	IC 16K SERIAL FRAM	获取价格
FM25C160-S	ETC	IC-SM-16K SERIAL FRAM	获取价格
FM25C160-STR	RAMTRON	Memory Circuit, 2KX8, CMOS, PDSO8, MS-012AA, SOIC-8	获取价格
FM25C160U	FAIRCHILD	16K-Bit SPI⑩ Interface Serial CMOS EEPROM	获取价格