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FM24C256-S1 PDF预览

FM24C256-S1

更新时间： 2024-02-09 14:39:11
品牌 Logo 应用领域
铁电 - RAMTRON 光电二极管内存集成电路
页数 文件大小 规格书
13页 95K
描述
Memory Circuit, 32KX8, PDSO8, SOP-8

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中文翻译

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FM24C256-S1 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.59Is Samacsys：N
JESD-30 代码：R-PDSO-G8内存密度：262144 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：32768 words字数代码：32000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：32KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES温度等级：INDUSTRIAL
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

FM24C256-S1 数据手册

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Preliminary Data Sheet  
FM24C256  
256Kb FRAM Serial Memory  
Features  
Low Power Operation  
256Kbit Ferroelectric Nonvolatile RAM  
•
•
•
True 5V Operation  
200 µA Active Current (100 kHz)  
100 µA Standby Current  
•
•
•
•
•
Organized as 32,768 x 8 bits  
High Endurance 100 Billion (1011) Read/Writes  
10 year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
8-pin EIAJ SOP  
Fast Two-wire Serial Interface  
•
•
Up to 1 MHz Maximum Bus Frequency  
Supports Legacy Timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24C256 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
A0  
VDD  
WP  
2
A1  
3
A2  
SCL  
SDA  
4
VSS  
The FM24C256 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers  
virtually unlimited write endurance, orders of  
magnitude more endurance than EEPROM. Also,  
FRAM exhibits much lower power during writes than  
EEPROM since write operations do not require an  
internally elevated power supply voltage for write  
circuits.  
Pin Names  
A0-A2  
SDA  
SCL  
WP  
Function  
Device Select Address  
Serial Data/Address  
Serial Clock  
Write Protect  
Ground  
VSS  
VDD  
Supply Voltage 5V  
These capabilities make the FM24C256 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Ordering Information  
FM24C256-S1  
8-pin SOP EIAJ  
The FM24C256 is provided in a 8-pin EIAJ SOP  
package using a familiar two-wire protocol. It is  
guaranteed over an industrial temperature range of  
-40°C to +85°C.  
This is a product in sampling or pre-production phase of develop-  
ment. Characteristic data and other specifications are subject to  
change without notice.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058  
www.ramtron.com  
Rev 1.1  
Sept 2001  
Page 1of 13  
1234567...13

中文翻译

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