Datasheet > FM21L16_11

FM21L16_11

更新时间： 2024-09-25 10:34:35

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
15页	292K
描述
2Mbit F-RAM Memory

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中文翻译

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数据手册

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FM21L16_11 数据手册

Pre-Production

FM21L16

2Mbit F-RAM Memory

Features

Superior to Battery-backed SRAM Modules

2Mbit Ferroelectric Nonvolatile RAM

•

No Battery Concerns

•

Organized as 128Kx16

Monolithic Reliability

Configurable as 256Kx8 Using /UB, /LB

10¹⁴Read/Write Cycles

NoDelay™ Writes

Page Mode Operation to 33MHz

Advanced High-Reliability Ferroelectric Process

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Low Power Operation

•

2.7V – 3.6V Power Supply

Low Current Mode (5µA) using ZZ pin

Low Active Current (8 mA typ.)

SRAM Compatible

•

Industry Std. 128Kx16 SRAM Pinout

60 ns Access Time, 110 ns Cycle Time

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

44-pin “Green”/RoHS TSOP-II package

Advanced Features

Software Programmable Block Write Protect

•

The device is available in a 400 mil 44-pin TSOP-II

surface mount package. Device specifications are

guaranteed over industrial temperature range –40°C

to +85°C.

Description

The FM21L16 is a 128Kx16 nonvolatile memory that

reads and writes like

a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional disadvantages, and system design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and high write endurance make the

F-RAM superior to other types of memory.

Pin Configuration

In-system operation of the FM21L16 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The F-RAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM21L16 ideal for

nonvolatile memory applications requiring frequent

or rapid writes in the form of an SRAM.

The FM21L16 includes a low voltage monitor that

blocks access to the memory array when V_DDdrops

below V_DDmin. The memory is protected against an

inadvertent access and data corruption under this

condition. The device also features software-

controlled write protection. The memory array is

divided into 8 uniform blocks, each of which can be

individually write protected.

Ordering Information

FM21L16-60-TG

60 ns access, 44-pin

“Green”/RoHS TSOP-II

FM21L16-60-TGTR 60 ns access, 44-pin

“Green”/RoHS TSOP-II,

Tape & Reel

This is a product in the pre-production phase of development. Device

characterization is complete and Ramtron does not expect to change the

specifications. Ramtron will issue a Product Change Notice if any

specification changes are made.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 2.0

Apr. 2011

Page 1 of 15

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中文翻译

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与FM21L16_11相关器件

型号	品牌	获取价格	描述	数据表
FM21L16-60-TG	RAMTRON	获取价格	2Mbit FRAM Memory
FM21L16-60-TGTR	RAMTRON	获取价格	Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, GREEN, MS-024GAC, TSOP2-44
FM21LD16	RAMTRON	获取价格	2Mbit F-RAM Memory
FM21LD16_11	RAMTRON	获取价格	2Mbit F-RAM Memory
FM21LD16-60-BG	RAMTRON	获取价格	2Mbit F-RAM Memory
FM21LD16-60-BGTR	RAMTRON	获取价格	2Mbit F-RAM Memory
FM21W1P1-K120	MOLEX	获取价格	D Subminiature Connector, 21 Contact(s), Male, Solder Terminal,
FM21W1P1-K121	MOLEX	获取价格	D Subminiature Connector, 21 Contact(s), Male, Solder Terminal,
FM21W1P2-K120	MOLEX	获取价格	D Subminiature Connector, 21 Contact(s), Male, Solder Terminal
FM21W1P5-1002	MOLEX	获取价格	D Subminiature Connector, 21 Contact(s), Male, Solder Terminal,

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