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FM16W08-SG PDF预览

FM16W08-SG

更新时间: 2024-03-03 10:09:24
品牌 Logo 应用领域
英飞凌 - INFINEON 存储
页数 文件大小 规格书
18页 320K
描述
铁电存储器 (F-RAM)

FM16W08-SG 数据手册

 浏览型号FM16W08-SG的Datasheet PDF文件第3页浏览型号FM16W08-SG的Datasheet PDF文件第4页浏览型号FM16W08-SG的Datasheet PDF文件第5页浏览型号FM16W08-SG的Datasheet PDF文件第7页浏览型号FM16W08-SG的Datasheet PDF文件第8页浏览型号FM16W08-SG的Datasheet PDF文件第9页 
FM16W08  
Note that if CE is tied to ground, the user must be sure WE is not  
LOW at power-up or power-down events. If the chip is enabled  
and WE is LOW during power cycles, data will be corrupted.  
Figure 4 shows a pull-up resistor on WE, which will keep the pin  
HIGH during power cycles, assuming the MCU / MPU pin  
tristates during the reset condition. The pull-up resistor value  
should be chosen to ensure the WE pin tracks VDD to a high  
enough value, so that the current drawn when WE is LOW is not  
an issue.  
Figure 4. Use of Pull-up Resistor on WE  
V
DD  
FM16W08  
CE  
WE  
OE  
A
MCU / MPU  
12-0  
DQ  
7-0  
Document Number: 001-86210 Rev. *F  
Page 6 of 18  

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