FM16W08
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Surface mount Pb soldering
temperature (3 seconds) ......................................... +260 C
Storage temperature ................................ –55 C to +125 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Static discharge voltage
Human Body Model (AEC-Q100-002 Rev. E) ............ 4 kV
Charged Device Model (AEC-Q100-011 Rev. B) .. 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) ................. 300 V
Latch-up current ................................................... > 140 mA
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS ........–1.0 V to + 7.0 V
Voltage applied to outputs
in High Z state ....................................–0.5 V to VDD + 0.5 V
Operating Range
Range
Industrial
Ambient Temperature (TA)
VDD
Input voltage .......... –1.0 V to + 7.0 V and VIN < VDD + 1.0 V
–40 C to +85 C
2.7 V to 5.5 V
Transient voltage (< 20 ns) on
any pin to ground potential .................–2.0 V to VCC + 2.0 V
DC Electrical Characteristics
Over the Operating Range
Parameter
VDD
IDD
Description
Power supply voltage
VDD supply current
Test Conditions
Min
2.7
–
Typ [1]
3.3
Max
5.5
12
Unit
V
VDD = 5.5 V, CE cycling at min. cycle time. All
inputs toggling at CMOS levels
–
mA
(0.2 V or VDD – 0.2 V), all DQ pins unloaded.
ISB
Standby current
VDD = 5.5 V, CE at VIH, All other pins are static
and at CMOS levels (0.2 V or VDD – 0.2 V)
–
20
50
µA
ILI
Input leakage current
Output leakage current
Input HIGH voltage
Input LOW voltage
VIN between VDD and VSS
VOUT between VDD and VSS
–
–
–
–
–
–
–
–
–
+1
µA
µA
V
ILO
–
0.7 × VDD
– 0.3
2.4
+1
VIH
VDD + 0.3
VIL
0.3 × VDD
V
VOH1
VOH2
VOL1
VOL2
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
IOH = –1.0 mA, VDD > 2.7 V
IOH = –100 µA
–
V
VDD – 0.2
–
–
V
IOL = 2 mA, VDD > 2.7 V
IOL = 150 µA
0.4
0.2
V
–
V
Data Retention and Endurance
Parameter
TDR
Description
Data retention
Test condition
At +85 C
Min
Max
Unit
10
38
–
–
–
–
Years
At +75 C
At +65 C
151
1014
NVC
Endurance
Over operating temperature
Cycles
Note
1. Typical values are at 25 °C, V = V (typ). Not 100% tested.
DD
DD
Document Number: 001-86210 Rev. *F
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