FM1608B

更新时间： 2024-09-23 12:46:19

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储
页数	文件大小	规格书
14页	342K
描述
64Kb Bytewide 5V F-RAM Memory

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中文翻译

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FM1608B 数据手册

Pre-Production

FM1608B

64Kb Bytewide 5V F-RAM Memory

Features

SRAM & EEPROM Compatible

JEDEC 8Kx8 SRAM & EEPROM pinout

70 ns Access Time

64Kbit Ferroelectric Nonvolatile RAM

Organized as 8,192 x 8 bits

High Endurance 1 Trillion (10¹²) Read/Writes

38 year Data Retention (@ +75 C)

NoDelay™ Writes

130 ns Cycle Time

Low Power Operation

15 mA Active Current

Advanced High-Reliability Ferroelectric Process

25 A (typ.) Standby Current

Superior to BBSRAM Modules

No Battery Concerns

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

28-pin “Green”/RoHS SOIC Package

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Resistant to Negative Voltage Undershoots

Description

Pin Configuration

The FM1608B is a 64-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides data retention for 38 years while

eliminating the reliability concerns, functional

disadvantages and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing

and high write endurance make F-RAM superior to

other types of nonvolatile memory.

A12

VDD

A11

A10

In-system operation of the FM1608B is very similar

to other RAM devices. Minimum read- and write-

cycle times are equal. The F-RAM memory, however,

is nonvolatile due to its unique ferroelectric memory

process. Unlike BBSRAM, the FM1608B is a truly

monolithic nonvolatile memory. It provides the same

functional benefits of a fast write without the

disadvantages associated with modules and batteries

or hybrid memory solutions.

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Ordering Information

These capabilities make the FM1608B ideal for

nonvolatile memory applications requiring frequent

or rapid writes in a bytewide environment. The

availability of a true surface-mount package improves

the manufacturability of new designs. Device

specifications are guaranteed over an industrial

temperature range of -40°C to +85°C.

FM1608B-SG

28-pin “Green”/RoHS SOIC

This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to

change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-86211 Rev. *A

Revised May 29, 2013

12 3 4 5 6 7...14

中文翻译

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与FM1608B相关器件

型号	品牌	获取价格	描述	数据表
FM1608B-SG	RAMTRON	获取价格	64Kb Bytewide 5V F-RAM Memory
FM1608B-SG	CYPRESS	获取价格	64Kb Bytewide 5V F-RAM Memory
FM1608B-SGTR	CYPRESS	获取价格	Memory Circuit, 8KX8, CMOS, PDSO28, ROHS COMPLIANT, SOIC-28
FM1608S180CI	ETC	获取价格	NVRAM (Ferroelectric Based)
FM1608S-180CI	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDIP28
FM1608S180SI	ETC	获取价格	NVRAM (Ferroelectric Based)
FM1608S-180SI	RAMTRON	获取价格	Memory Circuit, 8KX8, CMOS, PDSO28
FM160B	RECTRON	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
FM160B-HF	RECTRON	获取价格	Rectifier Diode,
FM160B-T	RECTRON	获取价格	Rectifier Diode,

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