Datasheet > FM160-LN

FM160-LN

更新时间： 2024-09-22 22:37:27

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	75K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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FM160-LN 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM120-LN THRU FM1100-LN

Silicon epitaxial planer type

SMA-LN

Features

0.205(5.2)

0.189(4.8)

0.012(0.3) Typ.

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.110(2.8)

0.094(2.4)

For surface mounted applications.

0.181(4.6)

0.165(4.2)

Exceeds environmental standards of MIL-S-19500 /

228

0.075(1.9)

0.067(1.7)

Low leakage current.

0.040(1.0) Typ.

0.040 (1.0) Typ.

0.067(1.7)

0.053(1.3)

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AC

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.0015 ounce, 0.05 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

120

T_STG

-55

+150

Operating

MARKING

V_RRM

V_RMS

V_R

V_F

temperature

SYMBOLS

CODE

( C)

(V)

FM120-LN

FM130-LN

FM140-LN

FM150-LN

FM160-LN

FM180-LN

FM1100-LN

SS12

SS13

SS14

SS15

SS16

SS18

S110

100

0.50

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.70

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.85

100

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FM160-MH	FORMOSA	获取价格	Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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FM160-S	FORMOSA	获取价格	Chip Schottky Barrier Diodes - Silicon epitaxial planer type