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FM140-N PDF预览

FM140-N

更新时间: 2024-11-12 22:40:55
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管
页数 文件大小 规格书
2页 74K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM140-N 数据手册

 浏览型号FM140-N的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM120-N THRU FM160-N  
Silicon epitaxial planer type  
Features  
SOD-323  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
0.106 (2.7)  
0.090 (2.3)  
0.012(0.3) Typ.  
For surface mounted applications.  
0.053 (1.35)  
0.045 (1.15)  
Exceeds environmental standards of MIL-S-19500 /  
228  
Low leakage current.  
0.044 (1.1)  
0.035 (0.9)  
0.035(0.9) Typ.  
0.035(0.9) Typ.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, JEDECSOD-323  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.04 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
30  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJC  
CJ  
90  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
120  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
VRRM  
VRMS  
VR  
VF  
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
FM120-N  
FM130-N  
FM140-N  
FM150-N  
FM160-N  
12  
13  
14  
15  
16  
20  
30  
40  
50  
60  
14  
21  
28  
35  
42  
20  
30  
40  
50  
60  
0.55  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
0.70  
-55 to +150  

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