Datasheet > FLM5964-6F

FLM5964-6F

更新时间： 2024-10-27 23:14:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	253K
描述
C-Band Internally Matched FET

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FLM5964-6F 数据手册

FLM5964-6F

C-Band Internally Matched FET

FEATURES

• High Output Power: P

= 38.5dBm (Typ.)

1dB

• High Gain: G

= 10.0dB (Typ.)

1dB

= 37% (Typ.)

• High PAE: η

• Low IM = -46dBc@Po = 27.5dBm

add

• Broad Band: 5.9 ~ 6.4GHz

• Impedance Matched Zin/Zout = 50Ω

• Hermetically Sealed Package

DESCRIPTION

The FLM5964-6F is a power GaAs FET that is internally matched for

standard communication bands to provide optimum power and gain in a

50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

-5

T = 25°C

Total Power Dissipation

Storage Temperature

Channel Temperature

31.2

-65 to +175

175

°C

stg

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with

gate resistance of 100Ω.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limit

Typ.

Item

Symbol

Test Conditions

Unit

Min.

Max.

= 5V, V

= 0V

Saturated Drain Current

Transconductance

2500 3750

DSS

= 5V, I

=1625mA

=125mA

2500

Pinch-off Voltage

= 5V, I

-0.5

-5.0

-1.5 -3.0

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

= -125µA

GSO

37.5 38.5

dBm

1dB

=10V,

9.0

10.0

1dB

= 0.65I

DSS (Typ.),

1625 1900

dsr

f = 5.9 ~ 6.4 GHz,

Power-added Efficiency

add

Z =Z = 50 ohm

Gain Flatness

∆G

0.6

f = 6.4 GHz, ∆f = 10 MHz

3rd Order Intermodulation

Distortion

2-Tone Test

-44

-46

dBc

= 27.5dBm S.C.L.

out

Thermal Resistance

Channel Temperature Rise

CASE STYLE: IB

Channel to Case

4.0

4.8

°C/W

°C

∆T

10V x I

x R

dsr

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Edition 1.2

August 2004

12 3 4

中文翻译

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