Datasheet > FLM1314-18F

FLM1314-18F

更新时间： 2024-11-13 03:37:07

品牌	Logo	应用领域
EUDYNA		/
页数	文件大小	规格书
5页	113K
描述
X,Ku-Band Internally Matched FET

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FLM1314-18F 数据手册

FLM1314-18F

X,Ku-Band Internally Matched FET

FEATURES

・High Output Power: P1dB=42.5dBm(Typ.)

・High Gain: G1dB=6.0dB(Typ.)

・High PAE: hadd=27%(Typ.)

・Broad Band: 13.75~14.5GHz

・Impedance Matched Zin/Zout = 50W

・Hermetically Sealed Package

DESCRIPTION

The FLM1314-18F is a power GaAs FET that is internally matched

for standard communication bands to provide optimum power and

gain in a 50W system.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)

Item

Symbol

V_{D S}

V_GS

P_T

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

-5

^oC

T_stg

-65 to +150

175

T_ch

RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)

Item

Symbol

VD S

IGF

Unit

Condition

Limit

≦10

DC Input Voltage

Forward Gate Current

Reverse Gate Current

RG=25 ohm

≦44.6

≧-9.6

IGR

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Limit

Typ.

9.3

Item

Symbol

Condition

Unit

Min.

Max.

Drain Current

IDSS

V DS=5V , V GS=0V

V DS=5V , ID S=4.65A

V DS=5V , ID S=390mA

IGS=-390uA

Trans conductance

6600

-1.5

Pinch-off Voltage

-0.5

-5.0

42.0

5.0

-3.0

Gate-Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

VGSO

P1dB

G1dB

Idsr

42.5

6.0

5.0

dBm

V _DS=10V

IDSDC=4.0A

6.0

f= 13.75 ~ 14.5 GHz

Zs=ZL=50 ohm

Power-added Efficiency

Gain Flatness

Nadd

1.2

f=14.5 GHz

D f=10MHz，2-tone Test

Pout=36.0dBm (S.C.L.)

3rd Order Intermodulation

Distortion

IM3

-25

-30

dBc

Thermal Resistance

Rth

DTch

Channel to Case

10V x Idsr X Rth

1.8

2.0

^oC/W

^oC

Channel Temperature Rise

100

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

CASE STYLE : IB

ESD

Class III

2000V ꢀ~

Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kW)

Edition 1.1

May 2005

12 3 4 5

中文翻译

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