Datasheet > FLM0910-12F

FLM0910-12F

更新时间： 2024-11-14 21:54:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
5页	183K
描述
X-Band Internally Matched FET

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FLM0910-12F 数据手册

FLM0910-12F

X-Band Internally Matched FET

FEATURES

・High Output Power: P1dB=40.5dBm(Typ.)

・High Gain: G1dB=7.0dB(Typ.)

・High PAE: ηadd=25%(Typ.)

・Broad Band: 9.5~10.5GHz

・Impedance Matched Zin/Zout = 50Ω

・Hermetically Sealed Package

DESCRIPTION

The FLM0910-12F is a power GaAs FET that is internally matched

for standard communication and radar bands to provide optimum

power and gain in a 50Ω system.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)

Item

Symbol

Rating

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

VGS

PTot

Tstg

Tch

-5

57.6

-65 to +175

175

^oC

RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)

Item

Symbol

VDS

Unit

Condition

Limit

≤10

DC Input Voltage

Gate Current

RG=50Ω

IGS

≤32.0

≥-5.6

IGR

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)

Limit

Typ.

6.0

5000

-1.5

Test Conditions

Item

Symbol

Unit

Max.

9.0

Min.

VDS=5V, VGS=0V

Drain Current

Transconductance

Pinch-off Voltage

Gate-Source Breakdown Voltage

IDSS

VDS=5V, IDS=3.6A

VDS=5V, IDS=300mA

IGS=-340uA

-0.5

-5.0

39.5

-3.0

VGSO

P1dB

Output Power at 1dB G.C.P.

40.5

7.0

dBm

VDS=10V

G1dB

Idsr

Power Gain at 1dB G.C.P.

Drain Current

6.0

f=9.5 - 10.5 GHz

IDS=0.5Idss (typ.)

Zs=ZL=50Ω

3.5

4.5

Power-added Efficiency

Gain Flatness

ηadd

∆G

1.2

Thermal Resistance

Channel Temperature Rise

CASE STYLE: IB

C/W

Channel to Case

10V X Idsr X Rth

2.3

2.6

Rth

∆Tch

G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level

Note:RF-Test is measured with Vgs-Constant Circuit.

ESD

Class Ⅲ

2000Vꢀ~

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)

Edition 1.2

September 2004

12 3 4 5

中文翻译

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